Counter-flow multi inject for atomic layer deposition chamber

ABSTRACT

A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/752,275, filed Jun. 26, 2015, which application claims benefit ofU.S. provisional patent application Ser. No. 62/017,454, filed Jun. 26,2014, each of which are herein incorporated by reference in theirentireties.

FIELD

Embodiments of the disclosure generally relate to apparatus and methodsfor atomic layer deposition.

BACKGROUND

Reliably producing submicron and smaller features is one of the keytechnologies for the next generation of very large scale integration(VLSI) and ultra large scale integration (ULSI) of semiconductordevices. However, as the fringes of circuit technology are pressed, theshrinking dimensions of interconnects in VLSI and ULSI technology haveplaced additional demands on the processing capabilities. The multilevelinterconnects that lie at the heart of this technology need preciseprocessing of high aspect ratio features, such as vias and otherinterconnects. Reliable formation of these interconnects is veryimportant to VLSI and ULSI success and to the continued effort toincrease circuit density and quality of individual substrates.

As circuit densities increase, the widths of interconnects, such asvias, trenches, contacts, and other features, as well as the dielectricmaterials between, decrease while the thickness of the dielectric layersremain substantially constant, resulting in increased height-to-widthaspect ratios of the features, Many traditional deposition processeshave difficulty filling submicron structures where the aspect ratioexceeds 4:1, and particularly where the aspect ratio exceeds 10:1.Therefore, there is a great amount of ongoing effort being directed atthe formation of substantially void-free and seam-free submicronfeatures having high aspect ratios.

Atomic layer deposition (ALD) is a deposition technique being exploredfor the deposition of material layers over features having high aspectratios. One example of an ALD process includes the sequentialintroduction of pulses of gases. For instance, one cycle for thesequential introduction of pulses of gases may contain a pulse of afirst reactant gas, followed by a pulse of a purge gas and/or a pumpevacuation, followed by a pulse of a second reactant gas, and followedby a pulse of a purge gas and/or a pump evacuation. The term “gas” asused herein is defined to include a single gas or a plurality of gases.Sequential introduction of separate pulses of the first reactant and thesecond reactant may result in the alternating self-limiting absorptionof monolayers of the reactants on the surface of the substrate and,thus, forms a monolayer of material for each cycle. The cycle may berepeated to a desired thickness of the deposited material. A pulse of apurge gas and/or a pump evacuation between the pulses of the firstreactant gas and the pulses of the second reactant gas serves to reducethe likelihood of gas phase reactions of the reactants due to excessamounts of the reactants remaining in the chamber. However, theinventors have observed that, in some chamber designs for ALDprocessing, the resultant deposition on the substrate has an “M” shapedthickness profile.

Therefore, the inventors have provided apparatus and methods to depositfilms during ALD processes that may provide a more uniform thickness.

SUMMARY

Embodiments of apparatus and methods for depositing materials onsubstrates during atomic layer deposition processes are disclosedherein. In some embodiments, a chamber lid assembly includes: a centralchannel having an upper portion and a lower portion and extending alonga central axis; a housing having an inner region and at least partiallydefining a first annular channel and a second annular channel, whereinthe first and second annular channels are fluidly coupled to the centralchannel; a first plurality of apertures disposed along a firsthorizontal plane through the housing to provide a multi-aperture inletbetween the first annular channel and the central channel, wherein eachaperture of the first plurality of apertures is angled with respect tothe central axis so as to induce a rotational flow of a gas about thecentral axis in a first rotational direction: a second plurality ofapertures disposed along a second horizontal plane through the housingto provide a multi-aperture inlet between the second annular channel andthe central channel, wherein each aperture of the second plurality ofapertures is angled with respect to the central axis so as to induce arotational flow of a gas about the central axis in a second rotationaldirection opposite the first rotational direction; and a tapered bottomsurface extending from the lower portion of the central channel to aperipheral portion of the chamber lid assembly.

In some embodiments, a method of processing a substrate includes:flowing a first process gas from one or more fluid sources through fluiddelivery lines of a chamber lid assembly and into a central channel ofthe chamber lid assembly, wherein the first process gas has a rotationalflow about a central axis of the central channel in a first rotationaldirection; flowing a second process gas from one or more fluid sourcesthrough fluid delivery lines of the chamber lid assembly and into thecentral channel, wherein the second process gas has a rotational flowabout the central axis of the central channel in a second rotationaldirection that is opposite the first rotational direction; mixing thefirst process gas and the second process gas within the central channel;and flowing the mixed process gases through the central channel and intoa reaction zone above a substrate disposed on a substrate support.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the present disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1A depicts a schematic cross-sectional view of a process chamberincluding a lid assembly and a gas delivery apparatus adapted for atomiclayer deposition as described in one embodiment herein.

FIG. 1B depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus adapted for atomic layer deposition as describedin one embodiment herein.

FIG. 1C depicts a perspective view of a top portion of the lid assemblyand a gas delivery apparatus adapted for atomic layer deposition asdescribed in one embodiment herein.

FIG. 1D depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus adapted for atomic layer deposition in accordancewith some embodiments of the present disclosure.

FIG. 1E depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus adapted for atomic layer deposition in accordancewith some embodiments of the present disclosure.

FIG. 2A depicts a perspective view of a housing for a lid assembly and agas delivery apparatus adapted for atomic layer deposition in accordancewith some embodiments of the present disclosure.

FIG. 2B depicts a top view of a housing for a lid assembly and a gasdelivery apparatus from FIG. 2A in accordance with some embodiments ofthe present disclosure.

FIG. 2C depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus from FIG. 2A in accordance with some embodimentsof the present disclosure.

FIG. 2D depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus from FIG. 2A in accordance with some embodimentsof the present disclosure.

FIG. 2E depicts a perspective cross-sectional view of a lid assembly anda gas delivery apparatus from FIG. 1A in accordance with someembodiments of the present disclosure.

FIG. 2F depicts a schematic cross-sectional view of a lid assembly and agas delivery apparatus in accordance with some embodiments of thepresent disclosure.

FIG. 2G depicts a perspective cross-sectional view of a lid assembly anda gas delivery apparatus from FIG. 2F in accordance with someembodiments of the present disclosure.

FIG. 3A depicts a perspective view of an insert for a lid assembly and agas delivery apparatus adapted for atomic layer deposition in accordancewith some embodiments of the present disclosure.

FIG. 3B depicts a schematic cross-sectional view of the lid assembly andgas delivery apparatus in FIG. 3A in accordance with some, embodimentsof the present disclosure.

FIG. 3C depicts a schematic cross-sectional view of the lid assembly anda gas delivery apparatus in FIG. 3 in accordance with some, embodimentsof the present disclosure.

FIG. 4A depicts a side view of an insert for a lid assembly and a gasdelivery apparatus adapted for atomic layer deposition in accordancewith some embodiments of the present disclosure.

FIGS. 4B, 4C, and 4D each depict cross-sectional top views of ahorizontal cross-section of the insert of FIG. 4A in accordance withsome embodiments of the present disclosure.

FIG. 5 depicts a schematic cross-sectional view of a portion of a lidassembly and a gas delivery apparatus adapted for atomic layerdeposition in accordance with some embodiments of the presentdisclosure.

FIG. 6 depicts a flow chart illustrating a method of processing asubstrate in accordance with some embodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of the present disclosure provide apparatus and methods thatmay be used to deposit materials during an atomic layer deposition (ALD)process. Embodiments include ALD process chambers and gas deliverysystems which include a multiple injection lid assembly, Otherembodiments provide methods for depositing materials using these gasdelivery systems during ALD processes. Examples of suitable processingchambers for incorporation of the apparatuses described herein includehigh dielectric constant (i.e., high k) and metal ALD depositionchambers available from Applied Materials, Inc., of Santa Clara, Calif.The following process chamber description is provided for context andexemplary purposes, and should not be interpreted or construed aslimiting the scope of the disclosure.

FIGS. 1A-1C are schematic views of a process chamber 100 including a gasdelivery system 130 adapted for ALD processes in accordance with someembodiments of the present disclosure. FIG. 10 is a schematic view ofthe process chamber 100 including another embodiment of the gas deliverysystem 130. Process chamber 100 includes a chamber body 102 having oneor more sidewalls 104 and a bottom 106. Slit valve 108 in the processchamber 100 provides access for a robot (not shown) to deliver andretrieve a substrate 110, such as a 200 mm or 300 mm semiconductor waferor a glass substrate, to and from the process chamber 100.

A substrate support 112 supports the substrate 110 on a substratereceiving surface 111 in the process chamber 100. The substrate support112 is mounted to a lift motor 114 for raising and lowering thesubstrate support 112 and the substrate 110 disposed thereon. A liftplate 116, connected to a lift motor 118, is mounted in the processchamber 100 to raise and lower lift pins 120 movably disposed throughthe substrate support 112. The lift pins 120 raise and lower thesubstrate 110 over the surface of the substrate support 112, Thesubstrate support 112 may include a vacuum chuck (not shown), anelectrostatic chuck (not shown), or a clamp ring (not shown) forsecuring the substrate 110 to the substrate support 112 during adeposition process.

The temperature of the substrate support 112 may be adjusted to controlthe temperature of the substrate 110 disposed thereon. For example,substrate support 112 may be heated using an embedded heating element,such as a resistive heater (not shown), or may be heated using radiantheat, such as heating lamps (not shown) disposed above the substratesupport 112. A purge ring 122 may be disposed on the substrate support112 to define a purge channel 124 which provides a purge gas to aperipheral portion of the substrate 110 to prevent deposition thereon.

Gas delivery system 130 is disposed at an upper portion of the chamberbody 102 to provide a gas, such as a process gas and/or a purge gas, toprocess chamber 100. FIGS. 1A-1D depict gas delivery system 130configured to expose the substrate 110 to at least two gas sources orchemical precursors. FIG. 1B is a cross-sectional view along line 1B ofFIG. 1A. A vacuum system 178 is in communication with the pumpingchannel 179 to evacuate any gases from the process chamber 100 and tohelp maintain a predetermined pressure or pressure range inside pumpingzone 166 of the process chamber 100.

In some embodiments, the gas delivery system 130 contains a chamber lidassembly 132 having a gas dispersing channel 134 extending through acentral portion of the chamber lid assembly 132. The gas dispersingchannel 134 extends perpendicularly toward the substrate receivingsurface 111 and also extends along central axis 133 of the gasdispersing channel 134, through lid plate 170, and to lower surface 160.In some embodiments, a portion of the gas dispersing channel 134 issubstantially cylindrical along central axis 133 within upper portion350 and a portion of the gas dispersing channel 134 tapers away fromcentral axis 133 within lower portion 135 of the gas dispersing channel134. The gas dispersing channel 134 further extends past lower surface160 and into a reaction zone 164. The lower surface 160 extends from thelower portion 135 of the gas dispersing channel 134 to a choke 162. Thelower surface 160 is sized and shaped to substantially cover thesubstrate 110 disposed on the substrate receiving surface 111 of thesubstrate support 112.

Gas flows 174, which illustrate the flow of process gases through thedispersing channel, may, contain various types of flow patterns. In someembodiments, processing gases may be forced to make revolutions aroundcentral axis 133 of gas dispersing channel 134 while passing through thedispersing channel. In such embodiments, the gas flows 174 may containvarious types of circular flow patterns, such as a vortex pattern, ahelix pattern, a spiral pattern, or derivatives thereof. Circular gasflows 174 may extend at least about 1 revolution around central axis 133of gas dispersing channel 134. In some, embodiments, circular gas flows174 may extend at least about 1.5 revolutions, or in some embodiments,at least about 2 revolutions, or in some embodiments, at least about 3revolutions, and in some embodiments, about 4 revolutions or more.

Although providing a circular gas flow 174 is beneficial for manyapplications, the inventors have discovered that in some applications,the circular gas flow can lead to non-uniform processing results. Assuch, in some embodiments, the gas flows 174 may be more turbulent toprovide enhanced mixing of two or more gases. The inventors haveobserved that providing the gas flow 174 with a more turbulent mixing,deposition uniformity can be improved in some applications. For example,in certain applications that result in an “m” shaped deposition profilewhen using a circular gas flow, with a low deposition rate in the centerand higher deposition rate in the region between the center and the edgeof the substrate, providing turbulent mixing can result in improveddeposition uniformity.

Gas dispersing channel 134 including upper portion 350 has gas inlets340, 345 to provide gas flows from two similar pairs of valves142A/152A, 142B/152B, which may be provided together or separately. Inone configuration, valve 142A and valve 142B are coupled to separatereactant gas sources but may be coupled to the same purge gas source.For example, valve 142A is coupled to reactant gas source 138 and valve142B is coupled to reactant gas source 139, and both valves 142A, 142Bare coupled to purge gas source 140. Each valve 142A, 142B includesdelivery line 143A, 143B having valve seat assembly 144A, 144B and eachvalve 152A, 152B includes purge line 145A, 145B having valve seatassembly 146A, 146B. Delivery line 143A, 143B is in fluid communicationwith reactant gas sources 138 and 139 and is in fluid communication withgas inlet 340, 345 of gas dispersing channel 134. Valve seat assembly144A, 144B of the delivery line 143A, 143B controls the flow of thereactant gas from reactant gas sources 138 and 139 to gas dispersingchannel 134. Purge line 145A, 145B is in communication with purge gassource 140 and intersects delivery line 143A, 143B downstream of valveseat assembly 144A, 144B of delivery line 143A, 143B. Valve seatassembly 146A, 146B of purge line 145A, 145B controls the flow of thepurge gas from purge gas source 140 to gas dispersing channel 134. If acarrier gas is used to deliver reactant gases from reactant gas sources138 and 139, the same gas may be used as a carrier gas and a purge gas(e.g., an argon gas used as a carrier gas and a purge gas).

Each valve seat assembly 144A, 144B, 146A, 146B may contain a diaphragm(not shown) and a valve seat (not shown). The diaphragm may be biasedopen or closed and may be actuated closed or open respectively. Thediaphragms may be pneumatically actuated or may be electricallyactuated. Pneumatically actuated valves include pneumatically actuatedvalves available from Fujikin, Inc. and Veriflo Division, ParkerHannifin, Corp. Electrically actuated valves include electricallyactuated valves available from Fujikin, Inc. For example, an ALD valvethat may be used is the Fujikin Model No. FPR-UDDFAT-21-6-35-PI-ASN orthe Fujikin Model No. FPR-NHDT-21-6.35-PA-AYT. Programmable logiccontrollers 148A, 148B may be coupled to valves 142A, 142B to controlactuation of the diaphragms of valve seat assemblies 144A, 144B, 146A,146B of valves 142A, 142B. Pneumatically actuated valves may providepulses of gases in time periods as low as about 0.020 seconds.Electrically actuated valves may provide pulses of gases in time periodsas low as about 0.005 seconds. An electrically actuated valve typicallyneeds the use of a driver coupled between the valve and the programmablelogic controller.

Each valve 142A, 142B may be a zero dead volume valve to enable flushingof a reactant gas from delivery line 143A, 143B when valve seat assembly144A, 144B is closed. For example, purge line 145A, 145B may bepositioned adjacent valve seat assembly 144A, 144B of delivery line143A, 143B. When valve seat assembly 144A, 144B is closed, purge line145A, 145B may provide a purge gas to flush delivery line 143A, 143B. Inone embodiment, purge line 145A, 145B is positioned slightly spaced fromvalve seat assembly 144A, 144B of delivery line 143A, 143B so that apurge gas is not directly delivered into valve seat assembly 144A, 144Bwhen open. A zero dead volume valve as used herein is defined as a valvewhich has negligible dead volume (i.e., not necessarily zero deadvolume).

Each valve pair 142A/152A, 142B/152B may be adapted to provide acombined gas flow and/or separate gas flows of the reactant gas and thepurge gas. In reference to valve pair 142A/152A, one example of acombined gas flow of the reactant gas and the purge gas, includes acontinuous flow of a purge gas from purge gas source 140 through purgeline 145A and pulses of a reactant gas from reactant gas source 138through delivery line 143A. The continuous flow of the purge gas may beprovided by leaving the diaphragm of valve seat assembly 146A of purgeline 145A open. The pulses of the reactant gas from reactant gas source138 may be provided by opening and closing the diaphragm of valve seatassembly 144A of delivery line 143A. In reference to valve pair142A/152A, one example of separate gas flows of the reactant gas and thepurge gas includes pulses of a purge gas from purge gas source 140through purge line 145A and pulses of a reactant gas from reactant gassource 138 through delivery line 143A. The pulses of the purge gas maybe provided by opening and dosing the diaphragm of valve seat assembly146A of purge line 145A. The pulses of the reactant gas from reactantgas source 138 may be provided by opening and closing the diaphragm ofvalve seat assembly 144A of delivery line 143A.

Delivery lines 143A, 143B of valves 142A, 142B may be coupled with gasinlets 340, 345 through fluid delivery lines 210, 220 and annularchannels 260, 265. Fluid delivery lines 210, 220 may be integrated withor may be separate from valves 142A, 142B, and connected to one or morefluid sources therethrough. In one aspect, valves 142A, 142B are coupledin close proximity to gas dispersing channel 134 to reduce anyunnecessary volume of delivery line 143A, 143B and fluid delivery lines210, 220 between valves 142A, 142B and gas inlets 340, 345.

Not wishing to be bound by theory, the diameter of gas dispersingchannel 134, which is constant from upper portion 350 of gas dispersingchannel 134 to some point along central axis 133 and increasing from thepoint to lower portion 135 of gas dispersing channel 134, allows less ofan adiabatic expansion of a gas through gas dispersing channel 134 whichhelps to control the temperature of the process gas contained in the gasflow 174. For instance, a sudden adiabatic expansion of a gas deliveredinto gas dispersing channel 134 may result in a drop in the temperatureof the gas which may cause condensation of the gas and formation ofdroplets. On the other hand, gas dispersing channel 134 that graduallytapers is believed to provide less of an adiabatic expansion of a gas.Therefore, more heat may be transferred to or from the gas, and, thus,the temperature of the gas may be more easily controlled by controllingthe temperature of chamber lid assembly 132. Gas dispersing channel 134may gradually taper and contain one or more tapered inner surfaces, suchas a tapered straight surface, a concave surface, a convex surface, orcombinations thereof or may contain sections of one or more taperedinner surfaces (i.e., a portion tapered and a portion non-tapered).

FIG. 1D is a similar view of the process chamber 100 as shown in FIG.1B, and may include similar features and components. FIG. 1D illustratesan embodiment of the gas delivery system 130 that includes four fluiddelivery lines 210, 215, 220, 225 coupled with gas inlets 340, 345, 370,375 of the gas dispersing channel 134 to provide gas flows from similarpairs of valves as described previously. In this embodiment, gasdispersing channel 134 including upper portion 350 has four sets of gasinlets 340, 345, 370, 375 to provide gas flows from pairs of valves,which may be provided together and/or separately. Delivery lines ofvalves may be coupled with gas inlets 340, 345, 370, 375 through fluiddelivery lines 210, 215, 220, 225 and annular channels 260, 265, 270,275.

The chamber lid assembly comprises a gas dispersing channel 134extending and expanding along a central axis at portion of the chamberlid assembly. An upper portion 350 of gas dispersing channel 134 isdefined by an insert 300 disposed in a housing 200. A cap 400 may bedisposed on the housing 200 and insert 300.

FIG. 1E is a similar view of the process chamber 100 as shown in FIG.1B, and may include similar features and components. FIG. 1E illustratesan embodiment of the gas delivery system 130 in which the insert 300 andthe cap 400 are a unitary design. Three fluid delivery lines 210, 220,215 are respectively coupled to gas inlets 340, 345, 370 of the gasdispersing channel 134 to provide gas flows from similar valves asdescribed previously. In this embodiment, gas dispersing channel 134 hasthree sets of gas inlets 340, 345, 370 to provide gas flows from valves,which may be provided together and/or separately. Delivery lines ofvalves may be coupled with gas inlets 340, 345, 370 through fluiddelivery lines 210, 220, 215, and annular channels 260, 265, 270. Inthis embodiment, the insert 300 and cap 400 include a plurality ofO-rings disposed between the insert and the body to ensure propersealing.

The housing 200 may comprise an annular manifold 205 disposed on a base207. In embodiments as shown in FIGS. 2A-2G, the annular manifold 205defines an inner region 290 and at least partially defines two or moreannular channels disposed around the inner region 290. FIG. 2C is across-section view along line 2C of FIG. 2A. FIG. 2D is a cross-sectionview along line 2D of FIG. 2C. In an alternative embodiment, the annularmanifold 205 defines an inner region 290 and includes an annular channeldisposed around the inner region 290. FIG. 2F is another embodimentshowing three fluid delivery lines and two annular channels. FIG. 2G isa cross-section view along line 2G of FIG. 2F.

The two or more annular channels are disposed in a vertically spacedmanner from each other along the central axis 133 of the annularmanifold 205. An annular channel, such as annular channel 260, comprisesa channel adapted for flowing a fluid therein, and partially orcompletely surrounds the inner region 290. The annular channel mayprovide far fluid communication of up to 360° for the inner region, forexample from 270° to 360°, around the inner region. Each annular channelallows for a fluid, such as a processing gas, to be delivered from afluid source (e.g. a gas source) to the inner region for dispersingfluids through apertures formed in the insert 300 coupled with theannular manifold 205. Each of the annular channels may have variouscross-section shapes and designs. For example, the annular channel maybe a circular, half-circle, rectangular, or ellipsoidal cross-sectiondesign. In some embodiments, the cross-section design is adapted toprovide for an effective flow of a fluid, such as a processing gas, fromthe annular channel to apertures coupled with the annular channel. Forexample, the annular channel may comprise three sides of a rectangularcross-section and the fourth side may be the vertical body 330 of theinsert 300. As such, the three rectangular cross-section sides and thefourth side of the vertical body 330 of the insert 300 together definethe annular channel.

In one embodiment, each annular channel circumferentially spans theinner region 290, such as annular channel 260, and provides for fluidcommunication of 360° of the inner region, as shown in FIGS. 2D and 2E.In an alternative embodiment, one of the annular channels may have afluid communication of 360° and at least a second annular channel ofless than 360°. In one embodiment, a first annular channel 260 and asecond annular channel 265 are disposed around the inner region 290.

One or more cartridge heaters 240 may be disposed in the annularmanifold 205, The housing 200 may be made of stainless steel. The cap400 may also be made of stainless steel.

Each of the annular channels is coupled with a respective fluid deliveryline, such as fluid delivery lines 210, 215, 220, 225 as shown in FIGS.1D, 2A, and 2F. Alternatively, each of the annular channels may becoupled with two or more fluid delivery lines, such as shown in FIGS. 2Fand 2G, which can provide for a mix of gases or alternative gasesflowing though the annular channels. Fluid delivery lines 210, 215, and220 are coupled with annular channels 260, 265. FIG. 2G shows fluiddelivery lines 210 and 215 each coupled with annular channel 265.

Each of the fluid lines is coupled with a fluid source, such as a gassource. Alternatively, each of the fluid lines may be coupled with twoor more gas sources, which can provide for a mix of gases or alternativegases flowing though the annular channels. The use of multiple annularchannels may allow the supply of different precursors, such as hafniumchloride and water for a hafnium oxide deposition process, and/or allowthe same precursor with different concentrations. Additionally, a plenummay supply different precursors including mixing precursors oralternating delivery of the precursors.

At least one purge line, such as purge line 250, may also be formed inthe annular manifold 205. The purge line is introduced into a verticalportion of the annular manifold 205. The purge line comprises ahorizontal gas transport line coupled with one or more gap purge lines280, which are disposed to contact the inner region 290 above and belowthe series of annular channels. Each of the gap purge lines 280 at theinner region may have an extending annular channel, such ascircumferentially formed annular channel 245, 255, formed at a surfaceof the annular manifold 205 disposed adjacent the inner region. Thepurge line 250 is also coupled with a vertically disposed line 230disposed in the annular manifold 205. The one or more gap purge linesalso provide flow of a purge gas along the vertical body 330 of theinsert 300 to the material intersection 380 between the insert 300 andthe material of the lid cap 172 forming the adjacent gas dispersingchannel 134. The purge gas will further prevent processing gases fromreacting with any structural sealing materials, such as o-rings 385,disposed between the housing and insert, with the underlying material ofthe lid cap 172 and lid plate assembly forming the adjacent gasdispersing channel 134.

The purge line 250 may be connected to one of the purge gas sources aspreviously described for the processing chamber, and the purge gas maycomprise a non-reactive gas, such as nitrogen or a noble gas. The purgeline provides a purge gas between the inserts and the annular manifold205 to remove unwanted processing gases in those areas. The purge gasprotects sensitive materials from the processing gases, such as o-ringmaterials, that can degrade over time when exposed to the reactiveprocessing gases, such as metal halide precursors.

Referring to FIGS. 3A-3C, an insert 300 is disposed in the inner region290 and defines upper portion 350 of gas dispersing channel 134. Theinsert comprises a coupling lid 310 having a truncated portion 320adapted to be coupled to a top portion of the housing 200, and avertical body 330 adapted to be disposed in and flush to the inside ofthe annular manifold 205. The vertical body 330 defines the upperportion 350. The upper portion may comprise a cylindrical shape or asubstantially cylindrical shape. In one example, as shown in FIG. 3B,the upper portion 350 comprises a cylindrical upper portion 351 and anexpanding bottom portion 352 with the expanding bottom portion 352disposed below a bottom set of a plurality of apertures 346.

One or more gas inlets 340, 345 may disposed in the vertical body of theinsert 300. The inlets 340, 345 may comprise a plurality of apertures341, 346 along a horizontal plane at a portion of the vertical body 330,thus forming multi-aperture inlets 340, 345. The number of apertures341, 346 along each horizontal plane may be between 2 and 10 apertures,for example, 6 apertures as shown in FIGS. 3A-3C. One or more sets ofthe plurality of apertures may be formed along the insert 300. Theapertures 341, 346 may be disposed equilaterally from each other aroundthe horizontal plane of the vertical body 330. Alternatively, theapertures 341, 346 may be spaced and/or grouped to provide apredetermined gas flow characteristic into the upper portion 350.Apertures disposed equilaterally from each other around the horizontalplane of the vertical body 330 in combination with an upper portion 350form equalization grooves, allowing for the same or substantially thesame pressure and gas flow rates through each of the apertures 341, 346to provide more uniform flow of process gases at the substrate surface.

The apertures 341, 346 may be disposed at any angle relative to centralaxis 133, such as about tangential to central axis 133 or gas dispersingchannel 134 and through the vertical body 330. The apertures 341, 346may be oriented at different angles to the radial and verticaldirections. The apertures 341, 346 may be angled from 0° to 90° in ahorizontal and/or vertical manner to provide a predetermined flowcharacteristic. In some embodiments, apertures 341 and 346 arepositioned at an angle tangential to upper portion 350, such as within arange from about 0° to about 90°, or in some embodiments from about 0°to about 60°, or in some embodiments from about 0° to about 45°, or insome embodiments from about 0° to about 20°.

The apertures 341, 346 are disposed to be fluidly coupled with the two,or more annular channels 260, 265 of the annular manifold 205. Multiplesets of pluralities of the apertures may be used with each inletcorresponding to an annular channel formed in the annular manifold 205.The apertures may be of any cross-section shape, for example, arectangular shape, a cylindrical tube, or a tear drop shape. Thecombination of the annular channels and inlets having multiple aperturesprovides more uniform flow of process gases at the substrate surface.

The insert 300 may be made of material that is non-reactive with theprocessing gases, such as metal halide precursor gases. One suchmaterial is quartz. In the configuration shown in the figures, a quartzinsert is observed to have increased material compatibility, i.e., aquartz insert has less reactivity with the halide precursors and otherprocessing gases, such as water, than other materials, such as stainlesssteel or aluminum. Additionally, the insert material may also be morecompatible with other structural components of the chamber that theinsert 300 may contact. For example, the lid cap 172 and portions of lidplate 170 surrounding the gas dispersing channel 134 are typically madeof quartz, with which a quartz insert 300 would have a good materialcompatibility and be more structurally compatible for manufacturing andassembling.

The lid cap described herein with the plurality of apertures (pluralityof entry points) forming an inlet provides for more uniform flow of theprocessing gases over the substrate surface, thus providing a moreuniform thickness in an annular direction as compared to a single entrypoint/single entry inlet. The inventors have observed that a lowerwafer-in-wafer (WiW) thickness can be achieved with an improvedthickness uniformity with the multi-annular channel of the lid cap 172assembly described herein along a 2 inch ring analysis, a 4 inch ringanalysis, and at 3 mm from the substrate edge compared to single entrypoint/single entry inlet. Additionally, the multi-annular channeldescribed herein has been observed to lower risk of back diffusion ascompared to a single entry point/single entry inlet, allow forindependent control of the processing gas through the separate lines,and provide for a heated inert gas purge to protect the o-rings ascompared to a single entry point/single entry inlet. Additionally, themulti-annular channel allows the use of PVC valves to improve corrosionprotection, provides a simplified hardware design, such as face sealsreplaced with VCR fittings, and eliminates components necessary for asingle entry point/single entry inlet, which allows for improvedserviceability as compared to a single entry point/single entry inlet.

FIGS. 1A-1B depict the pathway gases travel to a gas dispersing channel134 as described in embodiments herein. Process gasses are deliveredfrom fluid delivery lines 210 and 220 into annular channels 260 and 265,through gas inlets 340, 345, and into the upper portion 350 and throughthe gas dispersing channel 134. FIGS. 2D, 3B, and 3C illustrate apathway for a process gas or precursor gas to travel, that is, fromfluid delivery line 210 into annular channel 265, through inlet 340, andinto the upper portion 350. A second pathway extends from fluid deliveryline 220 into annular channel 260, through inlet 345, and into the upperportion 350, as depicted in FIGS. 1B, 2D, 3B, and 3C.

FIG. 1B is a cross-sectional view of the upper portion 350 of gasdispersing channel 134 and the gas dispersing channel 134 of chamber lidassembly 132 showing simplified representations of gas flowstherethrough. Although the exact flow pattern through the gas dispersingchannel 134 is not known, circular gas flow 174 (FIG. 1B) may travelfrom inlets 340, 345 through gas dispersing channel 134 with a circularflow pattern, such as a vortex flow, a helix flow, a spiral flow, aswirl flow, a twirl flow, a twist flow, a coil flow, a corkscrew flow, acurl flow, a whirlpool flow, derivatives thereof, or combinationsthereof. As shown in FIG. 1B, the circular flow may be provided in a“processing region” as opposed to in a compartment separated fromsubstrate 110. In one aspect, circular gas flow 174 may help toestablish a more efficient purge of gas dispersing channel 134 due tothe sweeping action of the vortex flow pattern across the inner surfaceof gas dispersing channel 134.

As mentioned above, the inventors have discovered that in someapplications, the circular gas flow can lead to non-uniform processingresults. As such, in some embodiments, the gas flows 174 may be moreturbulent to provide enhanced mixing of two or more gases. FIG. 4Adepicts an insert 300, which when inserted into the lid cap of an ALDchamber, defines three or more annular channels 402, 404, 406 between avertical body 330 of the insert 300 and the lid cap. The annularchannels 402, 404, 406 are substantially similar to the annular channels260, 265, 270, 275, described above. The annular channels 402, 404, 406are fluidly coupled to a plurality of apertures 410, 420, 430,respectively. The number of apertures 410, 420, 430 along eachhorizontal plane may be between 2 and 10 apertures, for example, 6apertures as shown in FIGS. 4B-4D. Similar to the apertures describedabove, each aperture within a respective plurality of apertures 410,420, 430 may be disposed equidistantly from each other around thevertical body 330. In this embodiment however, at least one of theplurality of apertures 410, 420, 430 are arranged to create a rotationalflow of a gas in an opposite direction as compared to at least one otherof the plurality of apertures 410, 420, 430 (e.g., from the perspectiveshown in FIGS. 4B-D, at least one of the plurality of apertures isconfigured to provide a rotational flow in a first, for exampleclockwise, direction, and at least one of the plurality of apertures isconfigured to provide a rotational flow in a second, for examplecounterclockwise, direction). For example, as shown in FIGS. 4B-D, theplurality of apertures 410 direct gas flow in a counterclockwisedirection, and the plurality of apertures 420 (and the plurality ofapertures 430) direct gas flow in a clockwise direction. As a result ofthe counter-flow direction configuration of the pluralities of apertures410, 420, 430, a turbulent gas flow 174 is created. The insert 300 mayinclude a plurality of grooves 408 for placement of o-rings to ensureproper sealing between the insert 300 and the lid cap of the ALDchamber.

FIG. 1A depicts that at least a portion of tower surface 160 of chamberlid assembly 132 may be tapered from gas dispersing channel 134 to aperipheral portion of chamber lid assembly 132 to help provide animproved velocity profile of a gas flow from gas dispersing channel 134across the surface of substrate 110 (i.e., from the center of thesubstrate to the edge of the substrate). Lower surface 160 may containone or more tapered surfaces, such as a straight surface, a concavesurface, a convex surface, or combinations thereof. In one embodiment,lower surface 160 is tapered in the shape of a funnel.

In one example, lower surface 160 is downwardly sloping to help reducethe variation in the velocity of the process gases'traveling betweenlower surface 160 of chamber lid assembly 132 and substrate 110 whileassisting to provide uniform exposure of the surface of substrate 110 toa reactant gas. In one embodiment, the ratio of the maximum area of theflow section over the minimum area of the flow section between adownwardly sloping lower surface 160 of chamber lid assembly 132 and thesurface of substrate 110 is less than about 2, or in some embodiments,less than about 1.5, or in some embodiments, less than about 1.3, or insome embodiments, about 1.

Not wishing to be bound by theory, a gas flow traveling at a moreuniform velocity across the surface of substrate 110 helps provide amore uniform deposition of the gas on substrate 110. The velocity of thegas is directly proportional to the concentration of the gas which is inturn directly proportional to the deposition rate of the gas onsubstrate 110 surface. Thus, a higher velocity of a gas at a first areaof the surface of substrate 110 versus a second area of the surface ofsubstrate 110 is believed to provide a higher deposition of the gas onthe first area. The chamber lid assembly 132 having lower surface 160,downwardly sloping, provides for more uniform deposition of the gasacross the surface of substrate 110 because lower surface 160 provides amore uniform velocity and, thus, a more uniform concentration of the gasacross the surface of substrate 110.

Various methods may also be employed to process a substrate inaccordance with embodiments of the present disclosure. In someembodiments, a method of processing a substrate includes flowing two ormore process gases from one or more fluid sources, such as gas sources138, 139, through fluid delivery lines 210, 220 of a chamber lidassembly 132 and flowing the two or more process gases from the fluiddelivery lines 210, 220 through two or more annular channels 260, 265 atleast partially defined by a housing 200 of the chamber lid assembly132. The housing has an inner region 290. The two or more process gasesare flown from the two or more annular channels 260, 265 through aninsert 300 disposed in the inner region 290 and into an upper portion350 of a gas dispersing channel 134 in the chamber lid assembly 132. Theinsert 300 defines the upper portion 350 of the gas dispersing channel134. The one or more process gases are flown through the gas dispersingchannel 134 and into a reaction zone 164 above a substrate 110 disposedon a substrate support 112.

FIG. 1A depicts choke 162 located at a peripheral portion of chamber lidassembly 132 adjacent the periphery of substrate 110. Choke 162, whenchamber lid assembly 132 is assembled to form a processing zone aroundsubstrate 110, contains any member restricting the flow of gastherethrough at an area adjacent the periphery of substrate 110.

In some embodiments, the spacing between choke 162 and substrate support112 is between about 0.04 inches and about 2.0 inches, for example,between 0.04 inches and about 0.2 inches. The spacing may vary dependingon the gases being delivered and the process conditions duringdeposition. Choke 162 helps provide a more uniform pressure distributionwithin the volume or reaction zone 164 defined between chamber lidassembly 132 and substrate 110 by isolating reaction zone 164 from thenon-uniform pressure distribution of pumping zone 166 (FIG. 1A).

Referring to FIG. 1A, in one aspect, since reaction zone 164 is isolatedfrom pumping zone 166, a reactant gas or purge gas needs only adequatelyfill reaction zone 164 to ensure sufficient exposure of substrate 110 tothe reactant gas or purge gas. In conventional chemical vapordeposition, prior art chambers are need to provide a combined flow ofreactants simultaneously and uniformly to the entire surface of thesubstrate in order to ensure that the co-reaction of the reactantsoccurs uniformly across the surface of substrate 110. In atomic layerdeposition, process chamber 100 sequentially introduces reactants to thesurface of substrate 110 to provide absorption of alternating thinlayers of the reactants onto the surface of substrate 110. As aconsequence, atomic layer deposition does not need a flow of a reactantwhich reaches the surface of substrate 110 simultaneously. Instead, aflow of a reactant needs to be provided in an amount which is sufficientto adsorb a thin layer of the reactant on the surface of substrate 110.

Since reaction zone 164 may contain a smaller volume when compared tothe inner volume of a conventional CVD chamber, a smaller amount of gasis used to fill reaction zone 164 for a particular process in an atomiclayer deposition sequence. For example, in some embodiments, the volumeof reaction zone 164 is about 1,000 cm³ or less, for example 500 cm³ orless, or in some embodiments 200 cm³ or less for a chamber adapted toprocess 200 mm diameter substrates. In some embodiments, the volume ofreaction zone 164 is about 3,000 cm³ or less, for example, 1,500 cm³ orless, or in some embodiments 600 cm³ or less for a chamber adapted toprocess 300 mm diameter substrates. In one embodiment, substrate support112 may be raised or lowered to adjust the volume of reaction zone 164for deposition. Because of the smaller volume of reaction zone 164, lessgas, whether a deposition gas or a purge gas, is necessary to be flowedinto process chamber 100. Therefore, the throughput of process chamber100 is greater and the waste may be minimized due to the smaller amountof gas used reducing the cost of operation.

Chamber lid assembly 132 has been shown in FIGS. 1A-1B as containing lidcap 172 and lid plate 170 in which lid cap 172 and lid plate 170 formgas dispersing channel 134. In one embodiment, process chamber 100contains lid cap 172 comprising a housing 200 having annular channels260 and 265 as shown in FIGS. 1A-1B. An additional plate may beoptionally disposed between lid plate 170 and lid cap 172 (not shown).The additional plate may be used to adjust (e.g., increase) the distancebetween lid cap 172 and lid plate 170, thus controlling the length ofthe gas dispersing channel 134 formed therethrough. In anotherembodiment, the optional additional plate disposed between lid plate 170and lid cap 172 contains stainless steel. In other embodiments, gasdispersing channel 134 may be made integrally from a single piece ofmaterial.

Chamber lid assembly 132 may include cooling elements and/or heatingelements depending on the particular gas being delivered therethrough.Controlling the temperature of chamber lid assembly 132 may be used toprevent gas decomposition, deposition, or condensation on chamber lidassembly 132. For example, water channels (not shown) may be formed inchamber lid assembly 132 to cool chamber lid assembly 132. In anotherexample, heating elements (not shown) may be embedded or may surroundcomponents of chamber lid assembly 132 to heat chamber lid assembly 132.In one embodiment, components of chamber lid assembly 132 may beindividually heated or cooled. For example, referring to FIG. 1A,chamber lid assembly 132 may contain lid plate 170 and lid cap 172 inwhich lid plate 170 and lid cap 172 form gas dispersing channel 134. Lidcap 172 may be maintained at one temperature range and lid plate 170 maybe maintained at another temperature range. For example, lid cap 172 maybe heated by being wrapped in heater tape or by using another heatingdevice to prevent condensation of reactant gases and lid plate 170 maybe maintained at ambient temperature. In another example, lid cap 172may be heated and lid plate 170 may be cooled with water channels formedtherethrough to prevent thermal decomposition of reactant gases on lidplate 170.

The components and parts of chamber lid assembly 132 may containmaterials such as stainless steel, aluminum, nickel-plated aluminum,nickel, alloys thereof, or other suitable materials. In one embodiment,lid cap 172 and lid plate 170 may be independently fabricated, machined,forged, or otherwise made from a metal, such as aluminum, an aluminumalloy, steel, stainless steel, alloys thereof, or combinations thereof.

In some embodiments, inner surface 131 of gas dispersing channel 134(including both inner surfaces of lid plate 170 and lid cap 172) andlower surface 160 of chamber lid assembly 132 may contain a mirrorpolished surface to help a flow of a gas along gas dispersing channel134 and lower surface 160 of chamber lid assembly 132. In someembodiments, the inner surface of fluid delivery lines 210 and 220 maybe electropolished to help produce a laminar flow of a gas therethrough.

In an alternative embodiment, inner surface 131 of gas dispersingchannel 134 (including both inner surfaces of lid plate 170 and lid cap172) and lower surface 160 of chamber lid assembly 132 may contain aroughened surface or machined surfaces to produce more surface areaacross the surfaces. Roughened surfaces provide better adhesion ofundesired accumulated materials on inner surface 131 and lower surface160. The undesired films are usually formed as a consequence ofconducting a vapor deposition process and may peel or flake from innersurface 131 and lower surface 160 to contaminate substrate 110. In oneexample, the mean roughness (R_(a)) of lower surface 160 and/or innersurface 131 may be at least about 10 μin, such as within a range fromabout 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm), or fromabout 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), or fromabout 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm). Inanother example, the mean roughness of lower surface 160 and/or innersurface 131 may be at least about 100 μin (about 2.54 μm), for example,within a range from about 200 μin (about 5.08 μm) to about 500 μin(about 121 μm).

FIG. 1A depicts control unit 180, such as a programmed personalcomputer, work station computer, or the like, coupled to process chamber100 to control processing conditions. For example, control unit 180 maybe configured to control flow of various process gases and purge gasesfrom gas sources 138, 139, and 140 through valves 142A and 142B duringdifferent stages of a substrate process sequence. Illustratively,control unit 180 contains central processing unit (CPU) 182, supportcircuitry 184, and memory 186 containing associated control software183.

Control unit 180 may be one of any form of general purpose computerprocessor that can be used in an industrial setting for controllingvarious chambers and sub-processors. CPU 182 may use any suitable memory186, such as random access memory, read only memory, floppy disk drive,hard disk, or any other form of digital storage, local or remote.Various support circuits may be coupled to CPU 182 for supportingprocess chamber 100. Control unit 180 may be coupled to anothercontroller that is located adjacent individual chamber components, suchas programmable logic controllers 148A, 148B of valves 142A, 142B.Bi-directional communications between the control unit 180 and variousother components of process chamber 100 are handled through numeroussignal cables collectively referred to as signal buses 188, some ofwhich are illustrated in FIG. 1A. In addition to control of processgases and purge gases from gas sources 138, 139, 140 and fromprogrammable logic controllers 148A, 148B of valves 142A, 142B, controlunit 180 may be configured to be responsible for automated control ofother activities used in wafer processing-such as wafer transport,temperature control, chamber evacuation, among other activities, some ofwhich are described elsewhere herein.

Referring to FIGS. 1A-1B, in operation, substrate 110 is delivered toprocess chamber 100 through slit valve 108 by a robot (not shown).Substrate 110 is positioned on substrate support 112 through cooperationof lift pins 120 and the robot. Substrate support 112 raises substrate110 into close opposition to lower surface 160 of chamber lid assembly132. A first gas flow may be injected into gas dispersing channel 134 ofprocess chamber 100 by valve 142A together or separately (i.e., pulses)with a second gas flow injected into process chamber 100 by valve 1428.The first gas flow may contain a continuous flow of a purge gas frompurge gas source 140 and pulses of a reactant gas from reactant gassource 138 or may contain pulses of a reactant gas from reactant gassource 138 and pulses of a purge gas from purge gas source 140. Thesecond gas flow may contain a continuous flow of a purge gas from purgegas source 140 and pulses of a reactant gas from reactant gas source 139or may contain pulses of a reactant gas from reactant gas source 139 andpulses of a purge gas from purge gas source 140.

Gas flow 174 travels through gas dispersing channel 134 as a turbulentflow which provides an enhanced mixing through the gas dispersingchannel 134. The turbulent gas flow 174 dissipates to a downward flowtowards the surface of substrate 110. The velocity of the gas flowreduces as the gas travels through gas dispersing channel 134. The gasflow then travels across the surface of substrate 110 and across lowersurface 160 of chamber lid assembly 132. Lower surface 160 of chamberlid assembly 132, which is downwardly sloping, helps reduce thevariation of the velocity of the gas flow across the surface ofsubstrate 110. The gas flow then travels by choke 162 and into pumpingzone 166 of process chamber 100. Excess gas, by-products, etc. flow intothe pumping channel 179 and are then exhausted from process chamber 100by vacuum system 178.

For example, in some embodiments a method of processing a substrate mayinclude flowing a first process gas from one or more fluid sourcesthrough fluid delivery lines of a chamber lid assembly and into acentral channel of the chamber lid assembly, wherein the first processgas has a rotational flow about a central axis of the central channel ina first rotational direction. A second process gas is flowed from one ormore fluid sources through fluid delivery lines of the chamber lidassembly and into the central channel, wherein the second process gashas a rotational flow about the central axis of the central channel in asecond rotational direction that is opposite the first rotationaldirection. The first process gas and the second process gas are mixedwithin the central channel and flowed through the channel into areaction zone above a substrate disposed on the substrate support of theprocess chamber.

Process chamber 100, as illustrated in FIGS. 1A-1B, has been describedherein as having a combination of features. In one aspect, processchamber 100 provides reaction zone 164 containing a small volume incompared to a conventional CVD chamber. Process chamber 100advantageously needs a smaller amount of a gas, such as a reactant gasor a purge gas, to fill reaction zone 164 for a particular process. Inanother aspect, process chamber 100 provides chamber lid assembly 132having a downwardly sloping or funnel shaped lower surface 160 to reducethe variation in the velocity profile of a gas flow traveling betweenthe bottom surface of chamber lid assembly 132 and substrate 110. Instill another aspect, process chamber 100 provides gas dispersingchannel 134 to reduce the velocity of a gas flow introducedtherethrough. In still another aspect, process chamber 100 providesfluid delivery lines at an angle α from the center of gas dispersingchannel 134. Process chamber 100 provides other features as describedelsewhere herein. Other embodiments of a chamber adapted for atomiclayer deposition incorporate one Or more of these features.

Although in the above description the annular channels 260, 265 aredefined by the insert and the adjacent lid cap, the annular channels260, 265 may alternatively be formed in other elements. For example, asshown in FIG. 5, the annular channels may be formed in a cover 504disposed above a lid cap 502. Grooves may be formed in the cover 504 todefine the annular channel 265 between the cover 504 and the lid cap 502and the annular channel 260 between the cover 504 and a cap disposedabove the cover 504. A plurality of channels (shown in phantom) areformed in the cover 504 in a similar configuration to the channels shownin FIGS. 4B-4D. The plurality of channels are fluidly coupled to gasinlets 340, 345 that are formed in the insert.

FIG. 6 depicts a method 600 of processing a substrate in accordancewith, some embodiments of the present disclosure. At 605 a first processgas is flowed from one or more fluid sources through fluid deliverylines of a chamber lid assembly and into a central channel of thechamber lid assembly. The first process gas has a rotational flow abouta central axis of the central channel in a first rotational direction.At 610 a second process gas is flowed from one or more fluid sourcesthrough fluid delivery lines of the chamber lid assembly and into thecentral channel. The second process gas has a rotational flow about thecentral axis of the central channel in a second rotational directionthat is opposite the first rotational direction. At 615, the first andsecond process gases are mixed within the central channel. At 620, themixed process gases are flowed through the central channel and into areaction zone above a substrate disposed on a substrate support.

While the foregoing is directed to some embodiments of the presentdisclosure, other and further embodiments may be devised withoutdeparting from the basic scope thereof.

What is claimed is:
 1. An apparatus for gas delivery for chemicaldeposition, comprising: an insert; a central channel disposed throughthe insert, the central channel having a circular cross-section and anupper portion and a lower portion extending along a central axis; afirst annular channel and a second annular channel formed in an outersurface of the insert; a first plurality of apertures disposed throughthe insert along a first horizontal plane to provide a multi-apertureinlet between the first annular channel and the central channel, whereineach aperture of the first plurality of apertures is angled with respectto the central axis so as to induce a rotational flow of a gas about thecentral axis in a first rotational direction; and a second plurality ofapertures disposed through the insert along a second horizontal plane toprovide a multi-aperture inlet between the second annular channel andthe central channel, wherein each aperture of the second plurality ofapertures is angled with respect to the central axis so as to induce arotational flow of a gas about the central axis in a second rotationaldirection opposite the first rotational direction.
 2. The apparatus ofclaim 1, wherein the first and second annular channels are each coupledto a fluid delivery line and each fluid delivery line is coupled to oneor more fluid sources.
 3. The apparatus of claim 1, wherein the firstand second pluralities of apertures each comprise between 2 and 10apertures.
 4. The apparatus of claim 1, wherein each aperture in thefirst plurality of apertures is disposed at an angle of up to about 60°in the first horizontal plane with respect to the central channel and isdisposed at an angle of about 0° to about 60° from the first horizontalplane, and wherein each aperture in the second plurality of apertures isdisposed at an angle of up to about 60° in the second horizontal planewith respect to the central channel and is disposed at an angle of about0° to about 60° from the second horizontal plane.
 5. The apparatus ofclaim 1, wherein each aperture of the first and second pluralities ofapertures comprises a rectangular shape, a cylindrical tube, or a teardrop shape.
 6. The apparatus of claim 1, further comprising: a thirdannular channel formed in the outer surface of the insert; and a thirdplurality of apertures disposed along a third horizontal plane throughthe insert to provide a multi-aperture inlet between the third annularchannel and the central channel, wherein each aperture of the thirdplurality of apertures is angled with respect to the central axis so asto induce a rotational flow of a gas about the central axis in a thirdrotational direction.
 7. The apparatus of claim 6, wherein the secondplurality of apertures is disposed between the first plurality ofapertures and the third plurality of apertures, and wherein the secondrotational direction is opposite the first rotational direction and thethird rotational direction.
 8. The apparatus of claim 1, wherein theinsert is formed of quartz.
 9. The apparatus of claim 1, wherein thecentral channel has an outer diameter defined by the insert.
 10. Theapparatus of claim 9, wherein the central channel is cylindrical in anupper portion of the insert and conical in a lower portion of the insertwith the outer diameter of the central channel expanding in a directionmoving away from the upper portion.
 11. The apparatus of claim 10,wherein the first and second pluralities of apertures are all coupled tothe central channel in the cylindrical upper portion of the centralchannel.
 12. The apparatus of claim 1, wherein the insert furthercomprises a cap covering the upper portion of the central channel.
 13. Aprocess chamber, comprising: a chamber body; a substrate supportdisposed within the chamber body; and a chamber lid assembly disposed onthe chamber body above the substrate support defining a reaction zonebetween the chamber lid assembly and the substrate support, the chamberlid assembly including a gas delivery apparatus as described in claim 1and further comprising: a tapered bottom surface extending from thelower portion of the central channel to a peripheral portion of thechamber lid assembly.
 14. The process chamber of claim 13, wherein alower surface of the chamber lid assembly is sized and shaped to cover asubstrate disposed on the substrate support.
 15. The process chamber ofclaim 13, wherein the chamber lid assembly comprises a choke disposed ata peripheral portion of the chamber lid assembly adjacent to a substratedisposed on the substrate support.
 16. The apparatus of claim 1, furthercomprising: a housing having an inner region, wherein the insert isdisposed within the inner region.
 17. The apparatus of claim 16, whereinan inner wall of the housing fore s a radially outer surface of thefirst annular channel and the second annular channel.
 18. The apparatusof claim 1, further comprising: a plurality of grooves formed in theouter surface of the insert to receive o-rings and disposed adjacent tothe first annular channel and the second annular channel.